Diffusion
- Diffusion is the primary method of introducing impurities such as boron, phophorus, and antimony into silicon to control the majority-carrier type and resistivity of layers formed in the wafer
Atomic Diffusion Mechanisms
- Diffusion in a solid can be visualised as atomic movement of the diffusant in the crystal lattice by vacancies or interstitials
- The process begin with the deposition of a high concentration of the desired impurity on the surface through windows etched in the protective barrier layer
- At high temperatures (900 to 1200 °C), the impurity atoms move from the surface into silicon crystal via the substitutional or interstitial diffusion mechanism
- The vacancy and the interstitial mechanisms are considered the dominating mechanism for dopant impurity diffusion in silicon
- Diffusion is the primary method of introducing impurities such as boron, phophorus, and antimony into silicon to control the majority-carrier type and resistivity of layers formed in the wafer
Atomic Diffusion Mechanisms
- Diffusion in a solid can be visualised as atomic movement of the diffusant in the crystal lattice by vacancies or interstitials
- The process begin with the deposition of a high concentration of the desired impurity on the surface through windows etched in the protective barrier layer
- At high temperatures (900 to 1200 °C), the impurity atoms move from the surface into silicon crystal via the substitutional or interstitial diffusion mechanism
- The vacancy and the interstitial mechanisms are considered the dominating mechanism for dopant impurity diffusion in silicon
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